DST857BDJ document number: ds32037 rev. 1 - 2 1 of 5 www.diodes.com january 2010 ? diodes incorporated DST857BDJ dual pnp small signal su rface mount transistor features ? epitaxial planar die construction ? ideally suited for automated assembly processes ? complementary npn type available (dst847bdj) ? lead, halogen and antimony free, rohs compliant (note 1) ? ?green? device (note 2) ? ultra small package mechanical data ? case: sot-963 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0027 grams (approximate) ordering information device packaging shipping DST857BDJ-7 sot-963 10,000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com marking information device schematic top view sot-963 tb = product type marking code tb
DST857BDJ document number: ds32037 rev. 1 - 2 2 of 5 www.diodes.com january 2010 ? diodes incorporated DST857BDJ maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 3) i c -100 ma thermal characteristics characteristic symbol value unit power dissipation (note 3) p d 300 mw thermal resistance, junction to ambient (note 3) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 3. device mounted on fr-4 pcb with minimum recommended pad layout. 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 1 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 370c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1 0.00001 0.001 0.1 10 1,000 1 10 100 1,000 p (pk), p eak t r ansien t p o we r (w) 0.1 fig. 2 single pulse maximum power dissipation t , pulse duration time (s) 1 single pulse t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 370c/w ja ja 0 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 160 t , ambient temperature ( c) a fig. 3 power dissipation vs. ambient temperature p , p o we r dissi p a t i o n (w) d note 3
DST857BDJ document number: ds32037 rev. 1 - 2 3 of 5 www.diodes.com january 2010 ? diodes incorporated DST857BDJ electrical characteristics @t a = 25c unless otherwise specified characteristic (note 4) symbol min typical max unit test condition collector-base breakdown voltage v ( br ) cbo -50 -100 - v i c = -10 a, i b = 0 collector-emitter breakdown voltage v ( br ) ces -50 -90 - v i c = -10 a, i b = 0 collector-emitter breakdown voltage v ( br ) ceo -45 -65 - v i c = -1ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -6 -8.5 - v i e = -1 a, i c = 0 collector cutoff current i cbo - - -15 n a v cb = -30v dc current gain h fe 100 200 340 330 - 470 - i c = -10 a, v ce = -5v i c = -2.0ma, v ce = -5v collector-emitter saturation voltage v ce(sat) - - -70 -300 -175 -500 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter saturation voltage v be(sat) - - -760 -885 -1000 -1100 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter voltage v be(on) -600 -670 -715 -780 -850 mv i c = -2.0ma, v ce = -5v i c = -10ma, v ce = -5v current gain-bandwidth product f t 100 340 - mhz v ce = -5v, i c = -10ma, f = 100mhz output capacitance c obo - 2.0 - pf v cb = -10v, f = 1.0mhz notes: 4. short duration pulse test used to minimize self-heating effect. 01 2 3 45 -v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.18 -i , c o lle c t o r c u r r e n t (a) c 0.16 i = -2ma b i = -0.2ma b i = -0.4ma b i = -0.6ma b i = -0.8ma b i = -1.6ma b i = -1.4ma b i = -1.2ma b i = -1.8ma b i = -1ma b 0 50 100 150 200 250 300 350 400 450 500 550 600 0 1 10 100 1,000 -i , collector current (ma) c fig. 5 typical dc current gain vs. collector current -h , d c c u r r en t g ain fe t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a v = 5v ce
DST857BDJ document number: ds32037 rev. 1 - 2 4 of 5 www.diodes.com january 2010 ? diodes incorporated DST857BDJ 0.01 0.1 1 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 10 cb t = 25c a t = 125c a t = 150c a t = 85c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 7 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) 1 i/i = 20 cb t = -55c a t = 25c a t = 150c a t = 85c a t = 125c a 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 8 typical base-emitter turn-on voltage vs. collector current -v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) v = -5v ce t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 9 typical base-emitter saturation voltage vs. collector current -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a gain = 10 package outline dimensions sot-963 dim min max typ a 0.40 0.50 0.45 a1 0 0.05 - c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 l 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 typ e1 0.70 typ all dimensions in mm l c e d e1 e e1 b (6 places) a a1
DST857BDJ document number: ds32037 rev. 1 - 2 5 of 5 www.diodes.com january 2010 ? diodes incorporated DST857BDJ suggest pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regarding to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com dimensions value (in mm) c 0.350 x 0.200 y 0.200 y1 1.100 y1 y (6x) c c x (6x)
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